n-channel p-channel v ds = 40v -40v i d = 8a (v gs =10v) -7a (v gs =-10v) r ds(on) r ds(on) < 19m (v gs =10v) < 23m (v g s =-10v) < 27m (v gs =4.5v) < 30m (v g s =-4.5v) the AO4618 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this complementary n and p channel mosfet configuration is ideal for low input voltage inverter application s. g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view g1 d1 s1 n - channel p - channel g2 d2 s2 symbol v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 40 74 90 gate-source voltage maximum junction-to-ambient a thermal characteristics 20 t a =70c avalanche current c junction and storage temperature range power dissipation b parameter typ max 40 15 11 2 t a =25c avalanche energy l=0.1mh c c a a 20 -7 8 6 1.3 -55 to 150 v c/w r q ja 48 -5.5 -35 mj units 62.5 -35 61 -40 drain-source voltage 40 v t a =25c t a =70c p d pulsed drain current c continuous drain current i d parameter 2 1.3 absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel units w www.freescale.net.cn 1/9 AO4618 40v complementary mosfet general description features
symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.9 2.4 v i d(on) 40 a 15.4 19 t j =125c 23.5 29 21 27 m w g fs 33 s v sd 0.75 1 v i s 2.5 a c iss 422 pf c oss 109 pf c rss 11 pf r g 1 2.2 3.5 w q g (10v) 6.4 9 nc q g (4.5v) 3.0 nc q gs 1.2 nc q gd 0.8 nc t d(on) 4.5 ns t 2 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =20v, r =2.5 w , reverse transfer capacitance total gate charge v gs =10v, v ds =20v, i d =8a gate source charge gate drain charge total gate charge i d =250 m a, v gs =0v m w on state drain current i s =1a,v gs =0v v ds =5v, i d =8a forward transconductance diode forward voltage v gs =10v, v ds =5v v gs =10v, i d =8a v gs =0v, v ds =20v, f=1mhz switching parameters m a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage v gs =4.5v, i d =4a r ds(on) static drain-source on-resistance i dss t r 2 ns t d(off) 16 ns t f 2.4 ns t rr 7.3 ns q rr 11 nc body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =2.5 w , r gen =3 w turn-off fall time i f =8a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 www.freescale.net.cn 2/9 AO4618 40v complementary mosfet
n-channel: typical electrical and thermal characteristics 17 5 2 10 0 18 0 4 8 12 16 20 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 3 6 9 12 15 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =8a v gs =4.5v i d =4a 25 e c 125 e c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 10v 3v 3.5v 4.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 e c 125 e c (note e) 10 15 20 25 30 35 40 45 50 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 e c 125 e c www.freescale.net.cn 3/9 AO4618 40v complementary mosfet
n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =20v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 e c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 e c t a =25 e c 100 m s 10ms to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 e c/w t on t p d www.freescale.net.cn 4/9 AO4618 40v complementary mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 5/9 AO4618 40v complementary mosfet
symbol min typ max units bv dss -40 v v ds =-40v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.7 -1.9 -3 v i d(on) -35 a 19 23 t j =125c 28 34 24 30 m w g fs 26 s v sd -0.74 -1 v i s -2.5 a c iss 1870 pf c oss 185 pf c rss 155 pf r g 2.2 4.5 6.8 w q g (10v) 32 45 nc q g (4.5v) 8 nc q gs 7.6 nc q gd 6.2 nc t d(on) 10 ns t r 18 ns t d(off) 38 ns v gs =0v, v ds =-20v, f=1mhz switching parameters v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current v ds =v gs i d =-250 m a r ds(on) m a drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-7a static drain-source on-resistance v gs =-4.5v, i d =-4a total gate charge v gs =10v, v ds =-20v, i d =-7a gate source charge gate drain charge p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss turn-off delaytime diode forward voltage m w gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance forward transconductance i s =-1a,v gs =0v v ds =-5v, i d =-7a v gs =10v, v ds =-20v, r l =3 w , r gen =3 w total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time t d(off) 38 ns t f 24 ns t rr 13 ns q rr 33 nc i f =-7a, di/dt=500a/ m s body diode reverse recovery time turn-off fall time turn-off delaytime r gen =3 w body diode reverse recovery charge i f =-7a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 e c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 e c, using 0 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 e c. ratings are based on low frequency and duty cycl es to keep initialt j =25 e c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 e c. the soa curve provides a single pulse rating. www.freescale.net.cn 6/9 AO4618 40v complementary mosfet
p-channel: typical electrical and thermal characteristics 17 5 2 10 0 18 0 10 20 30 40 0 1 2 3 4 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-4a v gs =-10v i d =-7a 25 www.freescale.net.cn 7/9 AO4618 40v complementary mosfet
p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-7a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 www.freescale.net.cn 8/9 AO4618 40v complementary mosfet
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i www.freescale.net.cn 9/9 AO4618 40v complementary mosfet
|
